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| New Product SI4642DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) () 0.00375 at VGS = 10 V 0.0047 at VGS = 4.5 V ID (A)a 34 30 Qg (Typ) 35.7 nC FEATURES * SkyFETTM Monolithic TrenchFET(R) Power MOSFET and Schottky Diode * 100 % Rg and UIS Tested APPLICATIONS * Notebook CPU Core * Buck Converter * Synchronous Rectifier Switch RoHS COMPLIANT SO-8 S S S G 1 2 3 4 Top View Ordering Information: SI4642DY-T1-E3 (Lead (Pb)-free) 8 7 6 5 D D D D G N-Channel MOSFET S Schottky Diode D ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 20 34 27 22.7b, c 18b, c 70 7 3.1b, c 45 101 7.8 5 3.5b, c 2.2b, c - 55 to 150 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec. d. Maximum under Steady State conditions is 80 C/W. t 10 sec Steady State Symbol RthJA RthJF Typ 29 13 Max 35 16 Unit C/W Document Number: 74430 S-71069-Rev. A, 21-May-07 www.vishay.com 1 New Product SI4642DY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On -State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 1 mA VDS = VGS, ID= 1 mA VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 100 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 20 A Min 30 1.5 Typ Max Unit 3 100 0.05 5.5 0.2 50 V nA mA A 40 0.0031 0.0039 108 0.00375 0.0047 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 5540 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A f = 1 MHz VDD = 15 V, RL = 3 ID 5 A, VGEN = 4.5 V, RG = 1 790 346 74 35.7 16.8 10.7 1.5 76 180 53 50 17 VDD = 15 V, RL = 3 ID 5 A, VGEN = 10 V, RG = 1 24 46 9 TC = 25 C IS = 2 A 0.44 36 IF = 13 A, di/dt = 100 A/s, TJ = 25 C 34 19 17 2.3 115 270 80 75 26 36 70 15 7 70 0.53 55 52 ns 110 54 nC pF Drain-Source Body Diode and Schottky Characteristics A V ns nC ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74430 S-71069-Rev. A, 21-May-07 New Product SI4642DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 70 VGS = 10 thru 4 V 56 I D - Drain Current (A) I D - Drain Current (A) 1.2 1.0 0.8 42 0.6 28 0.4 TC = 125 C 14 3V 0 0.0 0.2 25 C - 55 C 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.0050 7000 6000 r DS(on) - On-Resistance ( ) 0.0045 VGS = 4.5 V 0.0040 C - Capacitance (pF) 5000 4000 3000 2000 Transfer Characteristics Ciss 0.0035 VGS = 10 V 0.0030 1000 0.0025 0 10 20 30 40 50 60 0 0 Crss 6 Coss 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 1.7 ID = 20 A VGS - Gate-to-Source Voltage (V) 8 r DS(on) - On-Resistance (Normalized) VDS = 10 V 6 VDS = 15 V VDS = 20 V 4 1.5 Capacitance VGS = 4.5 V 1.3 VGS = 10 V 1.1 2 0.9 0 0 10 20 30 40 50 60 70 80 Qg - Total Gate Charge (nC) 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74430 S-71069-Rev. A, 21-May-07 www.vishay.com 3 New Product SI4642DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.015 ID = 20 A r DS(on) - O n-Resistance ( ) 0.012 I S - Source Current (A) 10 TJ = 150 C 0.009 TJ = 25 C 1 0.006 25 C 0.003 125 C 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.1 200 On-Resistance vs. Gate-to-Source Voltage 0.01 I R - Reverse (A) 30 V 0.001 10 V 20 V Power (W) 160 120 0.0001 80 0.00001 40 0.000001 0 25 50 75 100 125 150 TJ - Temperature (C) 0 0.001 0.01 0.1 Time (sec) 1 10 Reverse Current (Schottky) 100 *Limited by rDS(on) 10 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 1 ms 10 ms 1 100 ms 1s 0.1 TC = 25 C Single Pulse 0.01 0.01 *VGS 0.1 1 10 10 s dc 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 74430 S-71069-Rev. A, 21-May-07 New Product SI4642DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 45 36 I D - Drain Current (A) 27 18 9 0 0 25 50 75 100 125 150 TC - Case Temperature (C) Current Derating* 10 2.0 8 1.6 Power (W) 6 Power 4 1.2 0.8 2 0.4 0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 TC - Case Temperature (C) TA - Case Temperature (C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74430 S-71069-Rev. A, 21-May-07 www.vishay.com 5 New Product SI4642DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.05 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 'Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74430 www.vishay.com 6 Document Number: 74430 S-71069-Rev. A, 21-May-07 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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